APLAC Models are available for the following PIN diodes. SPICE models are not available for Agilent Technologies PIN diodes as SPICE does not model carrier lifetime, a critical parameter for PIN diodes.
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP380x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  10000 
Rmin  ohm  minimum r.f. resistance  2 
K    resistance curve fitting exponent  1.015 
A    resistance curve fitting constant  0.0434 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.3 
Is  A  diode saturation current  3.5E9 
N    diode ideality factor  2.062 
TT  nsec  transit time (carrier lifetime)  1800 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP381x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  12000 
Rmin  ohm  minimum r.f. resistance  2.5 
K    resistance curve fitting exponent  0.987 
A    resistance curve fitting constant  0.0902 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.25 
Is  A  diode saturation current  1.2E9 
N    diode ideality factor  1.998 
TT  nsec  transit time (carrier lifetime)  1500 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP382x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  5000 
Rmin  ohm  minimum r.f. resistance  0.35 
K    resistance curve fitting exponent  0.767 
A    resistance curve fitting constant  0.00825 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.8 
Is  A  diode saturation current  1.15E11 
N    diode ideality factor  1.641 
TT  nsec  transit time (carrier lifetime)  70 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP383x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  5000 
Rmin  ohm  minimum r.f. resistance  1.5 
K    resistance curve fitting exponent  0.9327 
A    resistance curve fitting constant  0.0183 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.2 
Is  A  diode saturation current  1.49E9 
N    diode ideality factor  2.022 
TT  nsec  transit time (carrier lifetime)  500 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP386x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  5000 
Rmin  ohm  minimum r.f. resistance  1.5 
K    resistance curve fitting exponent  0.9327 
A    resistance curve fitting constant  0.0183 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.2 
Is  A  diode saturation current  1.49E9 
N    diode ideality factor  2.022 
TT  nsec  transit time (carrier lifetime)  500 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP388x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  5000 
Rmin  ohm  minimum r.f. resistance  1 
K    resistance curve fitting exponent  0.864 
A    resistance curve fitting constant  0.0486 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.4 
Is  A  diode saturation current  1.49E9 
N    diode ideality factor  1.947 
TT  nsec  transit time (carrier lifetime)  2500 
APLAC Limited PIN Diode Model
The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article
SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF  November 1992.
APLAC MODEL LIMITATIONS:

 The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
 A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
 The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
 APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP389x Limited APLAC Model
D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network
of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP3800). Parameters also apply to the individual diodes within multiple
diode configurations.
parameter  units  description  value 
Rmax  ohm  maximum r.f. resistance  5000 
Rmin  ohm  minimum r.f. resistance  0.5 
K    resistance curve fitting exponent  0.746 
A    resistance curve fitting constant  0.0202 
L  nH  connection inductance  2 
C  pF  diode capacitance at r.f. frequency  0.2 
Is  A  diode saturation current  1.68E11 
N    diode ideality factor  1.673 
TT  nsec  transit time (carrier lifetime)  200 
