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SPICE Library: INA Series Models

  Models are available for the following INA series devices:

  • INA-01: High gain IF amplifier / <500 MHz LNA
  • INA-02: High gain LNA for applications to 1 GHz
  • INA-03: Low voltage flat to 2 GHz amplifier
  • INA-10: DBS/TVRO IF amplifier
  • INA-12: self-biased transistor for amplifier applications in 3 V handsets. user defined RF match.


INA-01 Model

[ top ]

SPICE model

* INA-01 DIE MODEL
* Combine with package model to complete

* DIE MODEL
XNA01 DIEOUT  DIEIN   DIEGND  INA01
.ENDS
* chip model
.SUBCKT INA01   DIEOUT  DIEIN   DIEGND

RBIAS1   Q2E      14      155    (TC1=-0.8E-3)
RBIAS2   Q3E      14       67    (TC1=-0.8E-3)
RE2      Q3E      15       25    (TC1=-0.8E-3)
RF1      DIEIN    14     1500    (TC1=-0.8E-3)
RF2      Q1C   DIEOUT     380    (TC1=-0.8E-3)
LP1      Q1E   DIEGND   0.20NH

LP2      15    DIEGND   0.20NH
CP1      Q1E   DIEGND   0.35PF
CP2      15    DIEGND   0.50PF
C3     DIEOUT  DIEGND   0.25PF
C4       Q1C   DIEGND   0.036PF
C5     DIEIN   DIEGND   0.086PF
C13      Q2E   DIEGND   0.023PF
C14      14    DIEGND   0.036PF
C16     Q3E    DIEGND   0.029PF
XNA01Q1  Q1C   DIEIN   Q1E   DIEGND    A01Q1
XNA01Q2  DIEOUT  Q1C    Q2E   DIEGND    A01Q2
XNA01Q3  DIEOUT  Q2E    Q3E   DIEGND    A01Q3

.ENDS
* Q1 distributed base model
.SUBCKT A01Q1   Q1C     Q1B     Q1E    Q1S
RC1      C1      5    10      (TC1=0.6E-3)
RC2      5      Q1C   10      (TC1=0.6E-3)
RB1     Q1B     7     1.1     (TC1=0.8E-3)
RB2     7      8     3.2    (TC1=1.2E-3)
RB3     8      B1     2.7     (TC1=1.8E-3)
RE      E1      Q1E    0.24    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    420
DCD1    Q1B     C1     DMOD    572
DCD2    7      C1     DMOD    680
DCD3    8      C1     DMOD    340

DCS     Q1S     5     DMOD    2475
.ENDS
* Q2 distributed base model
.SUBCKT A01Q2   Q2C     Q2B     Q2E    Q2S
RC1      C1      5    10       (TC1=0.6E-3)
RC2      5      Q2C   10       (TC1=0.6E-3)
RB1     Q2B     7     1.1      (TC1=0.8E-3)
RB2      7      8     3.2      (TC1=1.2E-3)
RB3     8      B1     2.7     (TC1=1.8E-3)
RE      E1      Q2E    0.28    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    420
DCD1    Q2B     C1     DMOD    570
DCD2    7       C1     DMOD    680

DCD3    8      C1     DMOD    340
DCS    Q2S      5     DMOD    2475
.ENDS
* Q3 distributed base model
.SUBCKT A01Q3   Q3C     Q3B     Q3E    Q3S
RC1      C1      5     9       (TC1=0.6E-3)
RC2      5      Q3C    8       (TC1=0.6E-3)
RB1     Q3B     7     1.2      (TC1=0.8E-3)
RB2      7      8     3.7      (TC1=1.2E-3)
RB3      8      B1     3.1     (TC1=1.8E-3)
RE      E1      Q3E    0.28    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    360
DCD1    Q3B     C1     DMOD    502

DCD2    7      C1     DMOD    583
DCD3    8      C1     DMOD    292
DCS     Q3S     5     DMOD2    2409
.ENDS

.MODEL  DMOD    D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL  DMOD2    D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL  QINA    NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+               CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+               VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+               NE=2.5)

To complete the IC model, the above die model must be combined with one of the following package models.

INA-01100
chip
package 00 model
INA-01170
pkg dwg
package 70 model


INA-02 Model

[ top ]

SPICE model

* INA-02 DIE MODEL
* Combine with package model to complete

* DIE MODEL
XNA02 DIEOUT  DIEIN   DIEGND  INA02
.ENDS
* chip model
.SUBCKT INA02   DIEOUT  DIEIN   DIEGND

RBIAS1   Q2E     14     155        (TC1=-0.8E-3)
RBIAS2   Q3E     14      67        (TC1=-0.8E-3)
RE2      Q3E     15      25        (TC1=-0.8E-3)
RF1      DIEIN   14    1250        (TC1=-0.8E-3)
RF2      Q1C   DIEOUT   475        (TC1=-0.8E-3)
LP1      Q1E   DIEGND   0.20NH

LP2      15    DIEGND   0.20NH
CP1      Q1E   DIEGND   0.35PF
CP2      15    DIEGND   0.50PF
C3     DIEOUT  DIEGND   0.25PF
C4       Q1C   DIEGND   0.036PF
C5     DIEIN   DIEGND   0.086PF
C13      Q2E   DIEGND   0.023PF
C14      14    DIEGND   0.036PF
C16     Q3E    DIEGND   0.029PF
XNA02Q1  Q1C   DIEIN   Q1E   DIEGND    A02Q1
XNA02Q2  DIEOUT  Q1C   Q2E   DIEGND    A02Q2
XNA02Q3  DIEOUT  Q2E   Q3E   DIEGND    A02Q3

.ENDS
* Q1 distributed base model
.SUBCKT A02Q1   Q1C     Q1B     Q1E    Q1S
RC1      C1     5      8       (TC1=0.6E-3)
RC2       5     Q1C   17       (TC1=0.6E-3)
RB1     Q1B     7     1.8      (TC1=0.8E-3)
RB2       7     8     5.6      (TC1=1.2E-3)
RB3       8     B1    4.7      (TC1=1.8E-3)
RE       E1     Q1E   0.42     (TC1=0.6E-3)
Q1       C1     B1     E1      QINA    240
DCD1    Q1B     C1     DMOD    362
DCD2     7      C1     DMOD    389
DCD3     8      C1     DMOD    195

DCS      Q1S    5      DMOD    1683
.ENDS
* Q2 distributed base model
.SUBCKT A02Q2   Q2C     Q2B     Q2E    Q2S
RC1      C1     5      10      (TC1=0.6E-3)
RC2      5      Q2C    10      (TC1=0.6E-3)
RB1     Q2B     7      1.1     (TC1=0.8E-3)
RB2     7      8       3.2     (TC1=1.2E-3)
RB3     8      B1      2.7     (TC1=1.8E-3)
RE      E1      Q2E    0.24    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    420
DCD1    Q2B     C1     DMOD    572
DCD2     7      C1     DMOD    680

DCD3     8      C1     DMOD    340
DCS     Q2S     5      DMOD    2475
.ENDS
* Q3 distributed base model
.SUBCKT A02Q3   Q3C     Q3B     Q3E    Q3S
RC1      C1      5     9       (TC1=0.6E-3)
RC2      5      Q3C    7       (TC1=0.6E-3)
RB1     Q3B      7     1.2     (TC1=0.8E-3)
RB2      7       8     3.7     (TC1=1.2E-3)
RB3      8      B1     3.1     (TC1=1.8E-3)
RE      E1      Q3E    0.28    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    360
DCD1    Q3B     C1     DMOD    502

DCD2    7      C1     DMOD    583
DCD3    8      C1     DMOD    292
DCS     Q3S     5     DMOD2  2409
.ENDS

.MODEL  DMOD    D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL  DMOD2    D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL  QINA    NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+               CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+               VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+               NE=2.5)

To complete the IC model, the above die model must be combined with one of the following package models.

INA-02100
chip
package 00 model
INA-02170
pkg dwg
package 70 model
INA-02184
pkg dwg
package 84 model
INA-02186
pkg dwg
package 86 model


INA-03 Model

[ top ]

SPICE model

* INA-03 DIE MODEL
* Combine with package model to complete

* DIE MODEL
XNA03 DIEOUT  DIEIN   DIEGND  INA03
.ENDS
* chip model
.SUBCKT INA03   DIEOUT  DIEIN   DIEGND

RBIAS1   Q2E     14     330        (TC1=-0.8E-3)
RBIAS2   Q3E     14     520        (TC1=-0.8E-3)
RE2      Q3E     15      50        (TC1=-0.8E-3)
RF1      DIEIN   14     750        (TC1=-0.8E-3)
RF2      Q1C    DIEOUT  700        (TC1=-0.8E-3)
LP1      Q1E    DIEGND   0.20NH

LP2      15     DIEGND   0.20NH
CP1      Q1E    DIEGND   0.35PF
CP2      15     DIEGND   0.50PF
C3     DIEOUT   DIEGND   0.25PF
C4       Q1C    DIEGND   0.036PF
C5     DIEIN    DIEGND   0.086PF
C13      Q2E    DIEGND   0.023PF
C14      14     DIEGND   0.036PF
CCOMP    Q3E      20     1.25PF
RES       20      15    25
XNA03Q1  Q1C     DIEIN   Q1E   DIEGND    A03Q1
XNA03Q2  DIEOUT   Q1C    Q2E   DIEGND    A03Q2
XNA03Q3  DIEOUT   Q2E    Q3E   DIEGND    A03Q3

.ENDS
* Q1 distributed base model
.SUBCKT A03Q1   Q1C     Q1B     Q1E    Q1S
RC1      C1      5     6.5       (TC1=0.6E-3)
RC2      5      Q1C   22.5       (TC1=0.6E-3)
RB1     Q1B      7     2.4       (TC1=0.8E-3)
RB2      7       8     7.5       (TC1=1.2E-3)
RB3      8       B1    6.3       (TC1=1.8E-3)
RE      E1      Q1E    0.55      (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    180
DCD1    Q1B     C1     DMOD    292
DCD2    7       C1     DMOD    292
DCD3    8       C1     DMOD    146

DCS    Q1S      5      DMOD    1419
.ENDS
* Q2 distributed base model
.SUBCKT A03Q2   Q2C     Q2B     Q2E    Q2S
RC1      C1      5     5.5       (TC1=0.6E-3)
RC2      5      Q2C   80         (TC1=0.6E-3)
RB1     Q2B      7     8.4       (TC1=0.8E-3)
RB2      7       8    28         (TC1=1.2E-3)
RB3     8       B1    23.5       (TC1=1.8E-3)
RE      E1      Q2E    2.1       (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    48
DCD1    Q2B     C1     DMOD    123
DCD2     7      C1     DMOD     79

DCD3     8      C1     DMOD     40
DCS     Q2S      5     DMOD    756
.ENDS
* Q3 distributed base model
.SUBCKT A03Q3   Q3C     Q3B     Q3E    Q3S
RC1      C1      5      7       (TC1=0.6E-3)
RC2      5      Q3C    27       (TC1=0.6E-3)
RB1     Q3B     7       3.6     (TC1=0.8E-3)
RB2      7      8      11.2     (TC1=1.2E-3)
RB3      8      B1      9.4     (TC1=1.8E-3)
RE      E1      Q3E     0.83    (TC1=0.6E-3)
Q1      C1      B1     E1      QINA    120
DCD1    Q3B     C1     DMOD    209

DCD2    7      C1     DMOD    198
DCD3    8      C1     DMOD     99
DCS    Q3S      5     DMOD2    1092
.ENDS

.MODEL  DMOD    D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL  DMOD2    D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL  QINA    NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+               CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+               VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+               NE=2.5)

To complete the IC model, the above die model must be combined with one of the following package models.

INA-03100
chip
package 00 model
INA-03170
pkg dwg
package 70 model
INA-03184
pkg dwg
package 84 model


INA-10 Model

[ top ]

SPICE model

* DIE MODEL
XNA10 DIEOUT  DIEIN   DIEGND  INA10
.ENDS

* chip model
.SUBCKT INA10   DIEOUT  DIEIN   DIEGND
RE1          Q1E     11        6         (TC1=-0.8E-3)
RE2          Q4E     15      40         (TC1=-0.8E-3)
RBIAS1   DIEIN  11   1150        (TC1=-0.8E-3)
RBIAS2   Q2E     15     600        (TC1=-0.8E-3)
RBIAS3   Q3E     15     200        (TC1=-0.8E-3)
RF1      DIEIN     Q3E      1200   (TC1=-0.8E-3)
RF2      Q1C      DIEOUT  500   (TC1=-0.8E-3)
LP1      11          DIEGND   0.15NH
LP2      15          DIEGND   0.15NH
CP1      11          DIEGND   0.35PF
CP2      15          DIEGND   0.35PF
COUT  DIEOUT  DIEGND   0.15PF
CIN      DIEIN      DIEGND    0.15PF
XNA10Q1  Q1C       DIEIN   Q1E     Q405
XNA10Q2  DIEOUT  Q1C    Q2E     Q406
XNA10Q3  DIEOUT  Q2E    Q3E     Q410
XNA10Q4  DIEOUT  Q3E    Q4E     Q420
.ENDS

* transistor models
.MODEL  q405    NPN BF=100     IS=2.0E-16     VA=20
+    BR=2.5     ME=0.6     NF=1.03    PTF=25
+    TF=1.2E-11    CJE= 2.9E-13   XTF=4     IK=1.6E-02
+    PE=1.01    ISE=6.0E-13     NE=2.5    VTF=6
+   XTB=1.818    ITF=3.6E-02     RB=24.15     RE=0.83
+    RC=25.22    CJC=1.2E-13    CJS=1.5E-13   XCJC=0.20
+    PS=0.80     MS=0.5     PC=0.76     MC=0.53

.MODEL  q406    NPN BF=100     IS=2.4E-16     VA=20
+    BR=2.5     ME=0.6     NF=1.03    PTF=25
+    TF=1.2E-11    CJE=3.5E-13    XTF=4     IK=1.9E-02
+    PE=1.01    ISE=7.2E-13     NE=2.5    VTF=6
+   XTB=1.818    ITF=4.3E-02     RB=20.15     RE=0.69
+    RC=22.80    CJC=1.5E-13    CJS=1.6E-13   XCJC=0.20
+    PS=0.80     MS=0.5     PC=0.76     MC=0.53

.MODEL  q410    NPN BF=100     IS=4.0E-16     VA=20
+    BR=2.5     ME=0.6     NF=1.03    PTF=25
+    TF=1.2E-11    CJE=5.8E-13    XTF=4     IK=3.2E-02
+    PE=1.01    ISE=1.2E-12     NE=2.5    VTF=6
+   XTB=1.818    ITF=7.2E-02     RB=12.13     RE=0.42
+    RC=10.10    CJC=2.3E-13    CJS=2.1E-13   XCJC=0.21
+    PS=0.80     MS=0.5     PC=0.76     MC=0.53

.MODEL  q420    NPN BF=100     IS=9.9E-16     VA=20
+    BR=2.5     ME=0.6     NF=1.03    PTF=25
+    TF=1.2E-11    CJE=1.4E-12    XTF=4     IK=8.0E-02
+    PE=1.01    ISE=3.0E-12     NE=2.5    VTF=6
+   XTB=1.818    ITF=1.8E-01     RB=4.86     RE=0.17
+    RC=13.15    CJC=5.5E-13    CJS=4.0E-13   XCJC=0.22
+    PS=0.80     MS=0.5     PC=0.76     MC=0.53

To complete the IC model, the above die model must be combined with the following package model.

INA-10386
pkg dwg
package 86 model


INA-12063 Model

[ top ]
SPICE model

*INA-12063 Macromodel
*Version 1.0, March 1997
*Connections:   IBias
*               |  Gnd2
*               |  |  In
*               |  |  |  Vd
*               |  |  |  |  Gnd1
*               |  |  |  |  |  Out & Vd
*               |  |  |  |  |  |
.subckt INA12   1  2  3  4  5  6
LB1 3 10 1.5n
LB2 6 8 1.5n
LE 11 12 1.2n
C1 10 8 75f
C2 6 5 0.4p
C3 13 5 1n
R1 4 9 4.7k
R2 9 10 2k
RE 12 13 2.5
D1 9 2 bias_diode 1

D2 1 14 bias_diode 200
Vsense 14 2 DC 0
F1 13 2 VSENSE 10.0
Q1 8 10 11 A2_31020

.model A2_31020 npn(is=4.04E-16 ise=1.43E-12 isc=2.74E-12
 +iss=4.6E-13 ne=2.0 nc=2.0 nf=1.03 nr=1.0 ns=1.0 vaf=2.2E1
 +ikf=3.43E-2 ikr=1.05E-1 bf=1.29E2 br=5.14 rb=1.615E1
 +rbm=5 re=9.5E-1 rc=3.1 cje=3.65E-13 mje=4E-1 vje=8.5E-1
 +fc=8E-1 cjc=1.42E-13 mjc=5E-1 vjc=7.5E-1 xcjc=4.04E-1
 +cjs=1.53E-13 mjs=5E-1 vjs=7E-1 tf=9.5E-12 tr=1.6E-9
 +itf=6.87E-2 xtf=3.15 ptf=1.8E1 xti=8 xtb=2.2)

.model bias_diode d(is=1E-14)
.ends

example use

* This PSPICE deck provides an example of how to use the INA-12 macro model
* The application is a 900MHz LNA as shown in Figure 32 of the datasheet
* Agilent Technologies, March 1997
*
Vsupply Vcc 0 3.0
Vin 2 0 DC 0 AC 2 SIN(0 14.1E-3 900E6)
X1 1 0 5 Vcc 0 6 INA12
Rbias Vcc 1 5.6k
RS 2 3 50
RL 7 0 50
R1 Vcc 6 470
L1 4 5 8.2n
L2 Vcc 6 8.2n
C1 3 4 100p
C2 6 7 2.2p

.OP
.AC LIN 501 0.1G 5.1G
*.TRAN 1n 20n 0n 10p
.include d:\pspice\ckt\hp_rfic.lib
.END
 
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this page last updated: 1 October 1999