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Models are available for the following MSA series devices:
SPICE model
* MSA-01 MODEL
* Combine with package model to complete
* DIE MODEL
XA01 DIEOUT DIEIN DIEGND MSA01
.ENDS
* chip model
.SUBCKT MSA01 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 550 (TC1=-0.8E-3)
RB DIEIN DIEGND 245 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 250 (TC1=-0.8E-3)
RE Q2E DIEGND 0
CF DIEIN DIEOUT 0.12PF
CP1 Q1E DIEOUT 0.033PF
CP3 DIEGND DIEOUT 0.103PF
XA01Q1 DIEOUT DIEIN Q1E A01Q1
XA01Q2 DIEOUT Q1E Q2E A01Q2
.ENDS
* Q1 distributed base model
.SUBCKT A01Q1 Q1C Q1B Q1E
RB1 Q1B 11 5.0 (TC1=0.8E-3)
RB2 11 12 13.2 (TC1=1.2E-3)
RB3 12 B1 9.9 (TC1=1.8E-3)
RE E1 Q1E 0.78 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 125
DCD1 Q1B C1 DMOD 348
DCD2 11 C1 DMOD 390
DCD3 12 C1 DMOD 114
.ENDS
* Q2 distributed base model
.SUBCKT A01Q2 Q2C Q2B Q2E
RB1 Q2B 21 3.1 (TC1=0.8E-3)
RB2 21 22 8.2 (TC1=1.2E-3)
RB3 22 B2 6.2 (TC1=1.8E-3)
RE E2 Q2E 0.49 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 200
DCD1 Q2B C2 DMOD 488
DCD2 21 C2 DMOD 624
DCD3 22 C2 DMOD 182
.ENDS
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-02 MODEL
* Combine with package model to complete
* DIE MODEL
XA02 DIEOUT DIEIN DIEGND MSA02
.ENDS
* chip model
.SUBCKT MSA02 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 330 (TC1=-0.8E-3)
RB DIEIN DIEGND 156 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 167 (TC1=-0.8E-3)
RE Q2E DIEGND 5 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.12PF
CP1 Q1E DIEOUT 0.033PF
CP3 DIEGND DIEOUT 0.103PF
XA02Q1 DIEOUT DIEIN Q1E A02Q1
XA02Q2 DIEOUT Q1E Q2E A02Q2
.ENDS
* Q1 distributed base model
.SUBCKT A02Q1 Q1C Q1B Q1E
RB1 Q1B 11 5.0 (TC1=0.8E-3)
RB2 11 12 13.2 (TC1=1.2E-3)
RB3 12 B1 9.9 (TC1=1.8E-3)
RE E1 Q1E 0.78 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 125
DCD1 Q1B C1 DMOD 348
DCD2 11 C1 DMOD 390
DCD3 12 C1 DMOD 114
.ENDS
* Q2 distributed base model
.SUBCKT A02Q2 Q2C Q2B Q2E
RB1 Q2B 21 2.5 (TC1=0.8E-3)
RB2 21 22 6.6 (TC1=1.2E-3)
RB3 22 B2 5.0 (TC1=1.8E-3)
RE E2 Q2E 0.39 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 250
DCD1 Q2B C2 DMOD 564
DCD2 21 C2 DMOD 780
DCD3 22 C2 DMOD 228
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-03 MODEL
* Combine with package model to complete
* DIE MODEL
XA03DIE DIEOUT DIEIN DIEGND MSA03
.ENDS
* chip model
.SUBCKT MSA03 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 330 (TC1=-0.8E-3)
RB DIEIN DIEGND 170 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 190 (TC1=-0.8E-3)
RE Q2E DIEGND 6.86 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.12PF
CP1 Q1E DIEOUT 0.033PF
CP3 DIEGND DIEOUT 0.103PF
XA03Q1 DIEOUT DIEIN Q1E A03Q1
XA03Q2 DIEOUT Q1E Q2E A03Q2
.ENDS
* Q1 distributed base model
.SUBCKT A03Q1 Q1C Q1B Q1E
RB1 Q1B 11 3.1 (TC1=0.8E-3)
RB2 11 12 8.2 (TC1=1.2E-3)
RB3 12 B1 6.2 (TC1=1.8E-3)
RE E1 Q1E 0.49 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 200
DCD1 Q1B C1 DMOD 478
DCD2 11 C1 DMOD 624
DCD3 12 C1 DMOD 182
.ENDS
* Q2 distributed base model
.SUBCKT A03Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.7 (TC1=0.8E-3)
RB2 21 22 4.4 (TC1=1.2E-3)
RB3 22 B2 3.3 (TC1=1.8E-3)
RE E2 Q2E 0.26 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 375
DCD1 Q2B C2 DMOD 780
DCD2 21 C2 DMOD 1170
DCD3 22 C2 DMOD 342
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-04 MODEL
* Combine with package model to complete
* DIE MODEL
XA04 DIEOUT DIEIN DIEGND MSA04
.ENDS
* chip model
.SUBCKT MSA04 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 230 (TC1=-0.8E-3)
RB DIEIN DIEGND 122 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 134 (TC1=-0.8E-3)
RE Q2E DIEGND 11 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.12PF
CP1 Q1E DIEOUT 0.033PF
CP3 DIEGND DIEOUT 0.103PF
XA04Q1 DIEOUT DIEIN Q1E A04Q1
XA04Q2 DIEOUT Q1E Q2E A04Q2
.ENDS
* Q1 distributed base model
.SUBCKT A04Q1 Q1C Q1B Q1E
RB1 Q1B 11 1.7 (TC1=0.8E-3)
RB2 11 12 4.4 (TC1=1.2E-3)
RB3 12 B1 3.3 (TC1=1.8E-3)
RE E1 Q1E 0.26 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 375
DCD1 Q1B C1 DMOD 780
DCD2 11 C1 DMOD 1131
DCD3 12 C1 DMOD 331
.ENDS
* Q2 distributed base model
.SUBCKT A04Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.0 (TC1=0.8E-3)
RB2 21 22 2.6 (TC1=1.2E-3)
RB3 22 B2 2.0 (TC1=1.8E-3)
RE E2 Q2E 0.16 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 625
DCD1 Q2B C2 DMOD 1204
DCD2 21 C2 DMOD 1885
DCD3 22 C2 DMOD 551
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-05 MODEL
* Combine with package model to complete
* DIE MODEL
XA05 DIEOUT DIEIN DIEGND MSA05
.ENDS
* chip model
.SUBCKT MSA05 DIEOUT DIEIN DIEGND
RF DIEIN 13 210 (TC1=-0.8E-3)
RE Q2E DIEGND 15 (TC1=-0.8E-3)
RB DIEIN DIEGND 800 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 50 (TC1=-0.8E-3)
RDC DIEIN DIEOUT 2000 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.26PF
CP1 Q1E DIEOUT 0.274PF
CP2 Q2E DIEOUT 0.150PF
CP3 DIEGND DIEOUT 0.496PF
CFBL 14 DIEOUT 45PF
LF 13 14 0.35NH
XA05Q1 DIEOUT DIEIN Q1E A05Q1
XA05Q2 DIEOUT Q1E Q2E A05Q2
.ENDS
* Q1 distributed base model
.SUBCKT A05Q1 Q1C Q1B Q1E
RB1 Q1B 11 1.26 (TC1=0.8E-3)
RB2 11 12 2.15 (TC1=1.2E-3)
RB3 12 B1 1.56 (TC1=1.8E-3)
RC C1 Q1C 5.87 (TC1=0.6E-3)
RE E1 13 0.14 (TC1=0.6E-3)
RBAL 13 Q1E 2.75 (TC1=0.6E-3)
Q1 C1 B1 E1 QPWR 720
DCD1 Q1B C1 DMOD 1267
DCD2 11 C1 DMOD 2380
DCD3 12 C1 DMOD 612
DCD4 13 C1 DMOD 1717
.ENDS
* Q2 distributed base model
.SUBCKT A05Q2 Q2C Q2B Q2E
RB1 Q2B 21 0.91 (TC1=0.8E-3)
RB2 21 22 1.07 (TC1=1.2E-3)
RB3 22 B2 0.78 (TC1=1.8E-3)
RC C2 Q2C 3 (TC1=0.6E-3)
RE E2 23 0.07 (TC1=0.6E-3)
RBAL 23 Q2E 1.38 (TC1=0.6E-3)
Q1 C2 B2 E2 QPWR 1440
DCD1 Q2B C2 DMOD 2354
DCD2 21 C2 DMOD 4760
DCD3 22 C2 DMOD 1224
DCD4 23 C2 DMOD 1717
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QPWR NPN (BF=75, BR=5, IS=1.65E-18, VA=30, TF=14PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=50, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.0E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-06 MODEL
* Combine with package model to complete
* DIE MODEL
XA06 DIEOUT DIEIN DIEGND MSA06
.ENDS
* chip model
.SUBCKT MSA06 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 600 (TC1=-0.8E-3)
RB DIEIN DIEGND 480 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 157 (TC1=-0.8E-3)
RE Q2E DIEGND 0
CF DIEIN DIEOUT 0.083PF
CP1 Q1E DIEOUT 0.019PF
CP2 Q2E DIEOUT 0.010PF
CP3 DIEGND DIEOUT 0.085PF
XA06Q1 DIEOUT DIEIN Q1E A06Q1
XA06Q2 DIEOUT Q1E Q2E A06Q2
.ENDS
* Q1 distributed base model
.SUBCKT A06Q1 Q1C Q1B Q1E
RB1 Q1B 11 .095 (TC1=0.8E-3)
RB2 11 12 3.26 (TC1=1.2E-3)
RB3 12 B1 2.83 (TC1=1.8E-3)
RE E1 Q1E 0.22 (TC1=0.6E-3)
RC C1 Q1C 10 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 438
DCD1 Q1B C1 DMOD 782
DCD2 11 C1 DMOD 609
DCD3 12 C1 DMOD 386
.ENDS
* Q2 distributed base model
.SUBCKT A06Q2 Q2C Q2B Q2E
RB1 Q2B 21 0.95 (TC1=0.8E-3)
RB2 21 22 3.26 (TC1=1.2E-3)
RB3 22 B2 2.83 (TC1=1.8E-3)
RE E2 Q2E 0.22 (TC1=0.6E-3)
RC C2 Q2C 10 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 438
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 609
DCD3 22 C2 DMOD 386
.ENDS
* DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-07 MODEL
* Combine with package model to complete
* DIE MODEL
XA07 DIEOUT DIEIN DIEGND MSA07
.ENDS
* chip model
.SUBCKT MSA07 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 360 (TC1=-0.8E-3)
RB DIEIN DIEGND 244 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 215 (TC1=-0.8E-3)
RE Q2E DIEGND 6 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.067PF
CP1 Q1E DIEOUT 0.020PF
CP2 Q2E DIEOUT 0.045PF
CP3 DIEGND DIEOUT 0.104PF
XA07Q1 DIEOUT DIEIN Q1E A07Q1
XA07Q2 DIEOUT Q1E Q2E A07Q2
.ENDS
* Q1 distributed base model
.SUBCKT A07Q1 Q1C Q1B Q1E
RB1 Q1B 11 1.5 (TC1=0.8E-3)
RB2 11 12 4.4 (TC1=1.2E-3)
RB3 12 B1 3.8 (TC1=1.8E-3)
RE E1 Q1E 0.33 (TC1=0.6E-3)
RC C1 Q1C 10 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 300
DCD1 Q1B C1 DMOD 602
DCD2 11 C1 DMOD 450
DCD3 12 C1 DMOD 261
.ENDS
* Q2 distributed base model
.SUBCKT A07Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.2 (TC1=0.8E-3)
RB2 21 22 3.1 (TC1=1.2E-3)
RB3 22 B2 2.7 (TC1=1.8E-3)
RE E2 Q2E 0.24 (TC1=0.6E-3)
RC C2 Q2C 10 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 420
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 629
DCD3 22 C2 DMOD 365
.ENDS
* DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-08 MODEL
* Combine with package model to complete
* DIE MODEL
XA08 DIEOUT DIEIN DIEGND MSA08
.ENDS
* chip model
.SUBCKT MSA08 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 6000 (TC1=-0.8E-3)
RB DIEIN DIEGND 1600 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 85 (TC1=-0.8E-3)
RE Q2E DIEGND 0
CP1 Q1E DIEOUT 0.086PF
CP2 Q2E DIEOUT 0.021PF
CP3 DIEGND DIEOUT 0.134PF
XA08Q1 DIEOUT DIEIN Q1E A08Q1
XA08Q2 DIEOUT Q1E Q2E A08Q2
.ENDS
* Q1 distributed base model
.SUBCKT A08Q1 Q1C Q1B Q1E
RB1 Q1B 11 2.6 (TC1=0.8E-3)
RB2 11 12 9.1 (TC1=1.2E-3)
RB3 12 B1 7.9 (TC1=1.8E-3)
RE E1 Q1E 0.63 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 156
DCD1 Q1B C1 DMOD 377
DCD2 11 C1 DMOD 138
DCD3 12 C1 DMOD 156
.ENDS
* Q2 distributed base model
.SUBCKT A08Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.0 (TC1=0.8E-3)
RB2 21 22 3.3 (TC1=1.2E-3)
RB3 22 B2 2.8 (TC1=1.8E-3)
RE E2 Q2E 0.22 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 438
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 609
DCD3 22 C2 DMOD 385
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-09 MODEL
* Combine with package model to complete
* DIE MODEL
XA09 DIEOUT DIEIN DIEGND MSA09
.ENDS
* chip model
.SUBCKT MSA09 DIEOUT DIEIN DIEGND
RF DIEIN 13 150 (TC1=-0.8E-3)
RE Q2E DIEGND 12 (TC1=-0.8E-3)
RB DIEIN DIEGND 2000 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 115 (TC1=-0.8E-3)
RDC DIEIN DIEOUT 6000 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.114PF
CFB 13 DIEOUT 0.058PF
CP1 Q1E DIEOUT 0.020PF
CP2 Q2E DIEOUT 0.023PF
CP3 DIEGND DIEOUT 0.168PF
CFBL 14 DIEOUT 45PF ; off-chip component
LF 13 14 0.35NH ; off-chip component
XA09Q1 DIEOUT DIEIN Q1E A09Q1
XA09Q2 DIEOUT Q1E Q2E A09Q2
.ENDS
* Q1 distributed base model
.SUBCKT A09Q1 Q1C Q1B Q1E
RB1 Q1B 11 2.6 (TC1=0.8E-3)
RB2 11 12 9.1 (TC1=1.2E-3)
RB3 12 B1 7.9 (TC1=1.8E-3)
RE E1 Q1E 0.63 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 156
DCD1 Q1B C1 DMOD 377
DCD2 11 C1 DMOD 138
DCD3 12 C1 DMOD 156
.ENDS
* Q2 distributed base model
.SUBCKT A09Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.0 (TC1=0.8E-3)
RB2 21 22 3.3 (TC1=1.2E-3)
RB3 22 B2 2.8 (TC1=1.8E-3)
RE E2 Q2E 0.22 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 438
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 609
DCD3 22 C2 DMOD 385
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-10 MODEL
* Combine with package model to complete
* DIE MODEL
XA10 DIEOUT DIEIN DIEGND MSA10
.ENDS
* chip model
.SUBCKT MSA10 DIEOUT DIEIN DIEGND
RF DIEIN 13 120 (TC1=-0.8E-3)
RE Q2E DIEGND 8.73 (TC1=-0.8E-3)
RB DIEIN DIEGND 270 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 25 (TC1=-0.8E-3)
RDC DIEIN DIEOUT 900 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.33PF
CP1 Q1E DIEOUT 0.52PF
CP2 Q2E DIEOUT 0.230PF
CP3 DIEGND DIEOUT 0.790PF
CFBL 14 DIEOUT 80PF
LF 13 14 1.00NH
XA10Q1 DIEOUT DIEIN Q1E A10Q1
XA10Q2 DIEOUT Q1E Q2E A10Q2
.ENDS
* Q1 distributed base model
.SUBCKT A10Q1 Q1C Q1B Q1E
RB1 Q1B 11 0.9 (TC1=0.8E-3)
RB2 11 12 1.1 (TC1=1.2E-3)
RB3 12 B1 0.8 (TC1=1.8E-3)
RC C1 Q1C 2.7 (TC1=0.6E-3)
RE E1 13 0.7 (TC1=0.6E-3)
RBAL 13 Q1E 1.38 (TC1=0.6E-3)
Q1 C1 B1 E1 QPWR 1440
DCD1 Q1B C1 DMOD 2354
DCD2 11 C1 DMOD 4760
DCD3 12 C1 DMOD 1224
DCD4 13 C1 DMOD 1717
.ENDS
* Q2 distributed base model
.SUBCKT A10Q2 Q2C Q2B Q2E
RB1 Q2B 21 0.7 (TC1=0.8E-3)
RB2 21 22 0.6 (TC1=1.2E-3)
RB3 22 B2 0.4 (TC1=1.8E-3)
RC C2 Q2C 1.24 (TC1=0.6E-3)
RE E2 23 0.3 (TC1=0.6E-3)
RBAL 23 Q2E 0.69 (TC1=0.6E-3)
Q1 C2 B2 E2 QPWR 2880
DCD1 Q2B C2 DMOD 4530
DCD2 21 C2 DMOD 9520
DCD3 22 C2 DMOD 2448
DCD4 23 C2 DMOD 1717
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QPWR NPN (BF=75, BR=5, IS=1.65E-18, VA=30, TF=14PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=50, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.0E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-11 MODEL
* Combine with package model to complete
* DIE MODEL
XA11 DIEOUT DIEIN DIEGND MSA11
.ENDS
* chip model
.SUBCKT MSA11 DIEOUT DIEIN DIEGND
RF DIEIN 13 300 (TC1=-0.8E-3)
RE Q2E DIEGND 10 (TC1=-0.8E-3)
RB DIEIN DIEGND 2400 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 80 (TC1=-0.8E-3)
RDC DIEIN DIEOUT 4000 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.10PF
CFB 13 DIEOUT 0.058PF
CP1 Q1E DIEOUT 0.050PF
CP2 Q2E DIEOUT 0.080PF
CP3 DIEGND DIEOUT 0.1208PF
CFBL 14 DIEOUT 200PF
LF 13 14 0.35NH
XA11Q1 DIEOUT DIEIN Q1E A11Q1
XA11Q2 DIEOUT Q1E Q2E A11Q2
.ENDS
* Q1 distributed base model
.SUBCKT A11Q1 Q1C Q1B Q1E
RB1 Q1B 11 0.42 (TC1=0.8E-3)
RB2 11 12 1.42 (TC1=1.2E-3)
RB3 12 B1 1.24 (TC1=1.8E-3)
RE E1 Q1E 0.10 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 1000
DCD1 Q1B C1 DMOD 1591
DCD2 11 C1 DMOD 1392
DCD3 12 C1 DMOD 882
.ENDS
* Q2 distributed base model
.SUBCKT A11Q2 Q2C Q2B Q2E
RB1 Q2B 21 0.67 (TC1=0.8E-3)
RB2 21 22 2.3 (TC1=1.2E-3)
RB3 22 B2 2.0 (TC1=1.8E-3)
RE E2 Q2E 0.16 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 625
DCD1 Q2B C2 DMOD 1051
DCD2 21 C2 DMOD 870
DCD3 22 C2 DMOD 551
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-20 MODEL
* Combine with package model to complete
* DIE MODEL
XA20 DIEOUT DIEIN DIEGND MSA20
.ENDS
* chip model
.SUBCKT MSA20 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 670 (TC1=-0.8E-3)
RE Q2E DIEGND 2.9 (TC1=-0.8E-3)
RB DIEIN DIEGND 350 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 75 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.04PF
CP1 Q1E DIEOUT 0.05PF
CP2 Q2E DIEOUT 0.15PF
CP3 DIEGND DIEOUT 0.25PF
XA20Q1 DIEOUT DIEIN Q1E A20Q1
XA20Q2 DIEOUT Q1E Q2E A20Q2
.ENDS
* Q1 distributed base model
.SUBCKT A20Q1 Q1C Q1B Q1E
RB1 Q1B 11 2.42 (TC1=0.8E-3)
RB2 11 12 7.45 (TC1=1.2E-3)
RB3 12 B1 6.25 (TC1=1.8E-3)
RE E1 Q1E 0.55 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 180
DCD1 Q1B C1 DMOD 292
DCD2 11 C1 DMOD 292
DCD3 12 C1 DMOD 146
.ENDS
* Q2 distributed base model
.SUBCKT A20Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.48 (TC1=0.8E-3)
RB2 21 22 4.47 (TC1=1.2E-3)
RB3 22 B2 3.75 (TC1=1.8E-3)
RE E2 Q2E 0.33 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 300
DCD1 Q2B C2 DMOD 432
DCD2 21 C2 DMOD 486
DCD3 22 C2 DMOD 243
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-21 MODEL
* Combine with package model to complete
* Note: this product uses the same die as the MSA-06
* DIE MODEL
XA06 DIEOUT DIEIN DIEGND MSA06
.ENDS
* chip model
.SUBCKT MSA06 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 600 (TC1=-0.8E-3)
RB DIEIN DIEGND 480 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 157 (TC1=-0.8E-3)
RE Q2E DIEGND 0
CF DIEIN DIEOUT 0.083PF
CP1 Q1E DIEOUT 0.019PF
CP2 Q2E DIEOUT 0.010PF
CP3 DIEGND DIEOUT 0.085PF
XA06Q1 DIEOUT DIEIN Q1E A06Q1
XA06Q2 DIEOUT Q1E Q2E A06Q2
.ENDS
* Q1 distributed base model
.SUBCKT A06Q1 Q1C Q1B Q1E
RB1 Q1B 11 .095 (TC1=0.8E-3)
RB2 11 12 3.26 (TC1=1.2E-3)
RB3 12 B1 2.83 (TC1=1.8E-3)
RE E1 Q1E 0.22 (TC1=0.6E-3)
RC C1 Q1C 10 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 438
DCD1 Q1B C1 DMOD 782
DCD2 11 C1 DMOD 609
DCD3 12 C1 DMOD 386
.ENDS
* Q2 distributed base model
.SUBCKT A06Q2 Q2C Q2B Q2E
RB1 Q2B 21 0.95 (TC1=0.8E-3)
RB2 21 22 3.26 (TC1=1.2E-3)
RB3 22 B2 2.83 (TC1=1.8E-3)
RE E2 Q2E 0.22 (TC1=0.6E-3)
RC C2 Q2C 10 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 438
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 609
DCD3 22 C2 DMOD 386
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-31 MODEL
* Combine with package model to complete
* DIE MODEL
XA31 DIEOUT DIEIN DIEGND MSA31
.ENDS
* chip model
.SUBCKT MSA31 DIEOUT DIEIN DIEGND
RF DIEIN DIEOUT 1115 (TC1=-0.8E-3)
RE Q2E DIEGND 0
RB DIEIN DIEGND 570 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 75 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.06PF
CP1 Q1E DIEOUT 0.05PF
CP2 Q2E DIEOUT 0.25PF
XA31Q1 DIEOUT DIEIN Q1E A31Q1
XA31Q2 DIEOUT Q1E Q2E A31Q2
.ENDS
* Q1 distributed base model
.SUBCKT A31Q1 Q1C Q1B Q1E
RB1 Q1B 11 2.42 (TC1=0.8E-3)
RB2 11 12 7.45 (TC1=1.2E-3)
RB3 12 B1 6.25 (TC1=1.8E-3)
RE E1 Q1E 0.55 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 180
DCD1 Q1B C1 DMOD 292
DCD2 11 C1 DMOD 292
DCD3 12 C1 DMOD 146
.ENDS
* Q2 distributed base model
.SUBCKT A31Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.48 (TC1=0.8E-3)
RB2 21 22 4.47 (TC1=1.2E-3)
RB3 22 B2 3.75 (TC1=1.8E-3)
RE E2 Q2E 0.33 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 300
DCD1 Q2B C2 DMOD 432
DCD2 21 C2 DMOD 486
DCD3 22 C2 DMOD 243
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
SPICE model
* MSA-99 MODEL
* Combine with package model to complete
*MSA-99 uses MSA-09 die with feedback unconnected (added externally by user)
* DIE MODEL
XA09 DIEOUT DIEIN DIEGND MSA09
.ENDS
* chip model
.SUBCKT MSA09 DIEOUT DIEIN DIEGND
RF DIEIN 13 150 (TC1=-0.8E-3)
RE Q2E DIEGND 12 (TC1=-0.8E-3)
RB DIEIN DIEGND 2000 (TC1=-0.8E-3)
RBIAS Q1E DIEGND 115 (TC1=-0.8E-3)
RDC DIEIN DIEOUT 6000 (TC1=-0.8E-3)
CF DIEIN DIEOUT 0.114PF
CFB 13 DIEOUT 0.058PF
CP1 Q1E DIEOUT 0.020PF
CP2 Q2E DIEOUT 0.023PF
CP3 DIEGND DIEOUT 0.168PF
XA09Q1 DIEOUT DIEIN Q1E A09Q1
XA09Q2 DIEOUT Q1E Q2E A09Q2
.ENDS
* Q1 distributed base model
.SUBCKT A09Q1 Q1C Q1B Q1E
RB1 Q1B 11 2.6 (TC1=0.8E-3)
RB2 11 12 9.1 (TC1=1.2E-3)
RB3 12 B1 7.9 (TC1=1.8E-3)
RE E1 Q1E 0.63 (TC1=0.6E-3)
RC C1 Q1C 5 (TC1=0.6E-3)
Q1 C1 B1 E1 QMSA 156
DCD1 Q1B C1 DMOD 377
DCD2 11 C1 DMOD 138
DCD3 12 C1 DMOD 156
.ENDS
* Q2 distributed base model
.SUBCKT A09Q2 Q2C Q2B Q2E
RB1 Q2B 21 1.0 (TC1=0.8E-3)
RB2 21 22 3.3 (TC1=1.2E-3)
RB3 22 B2 2.8 (TC1=1.8E-3)
RE E2 Q2E 0.22 (TC1=0.6E-3)
RC C2 Q2C 5 (TC1=0.6E-3)
Q1 C2 B2 E2 QMSA 438
DCD1 Q2B C2 DMOD 782
DCD2 21 C2 DMOD 609
DCD3 22 C2 DMOD 385
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53, BV=45, IBV=1E-9)
.MODEL QMSA NPN (BF=90, BR=5, IS=1.65E-18, VA=20, TF=12PS,
+ CJE=1.8E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.333E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
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