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Transistor Specification Selection Guide Output Power as an Amplifier   2 V Isolated Collector Bipolar Transistors   HBFP-0405   5 dBm   2.4 GHz     5 dBm   900 MHz     HBFP-0420   12 dBm     12 dBm     HBFP-0450   19 dBm     19 dBm     3 V Microcurrent Bipolar Transistors   AT-305xx   7 dBm   2.4 GHz     7 dBm   900 MHz     AT-310xx   9 dBm     9 dBm     AT-320xx   13 dBm     13 dBm     5 V Conventional and Power Bipolar Transistors   AT-415xx   14.5 dBm   2.4 GHz     14.5 dBm   900 MHz     AT-380xx   21 dBm   2.4 GHz     23 dBm   900 MHz     AT-316xx   27 dBm   AT-332xx   30 dBm   AT-364xx   35 dBm   8 V Conventional Bipolar Transistors   AT-414xx   17 dBm     17 dBm     AT-420xx   20 dBm     20 dBm     16 V Driver Bipolar Transistors   AT-640xx   26 dBm     27 dBm 0  5 10 15 20 25 30 35 40     Output Power [dBm]                                                                                           1.5-4 V PHEMTs   ATF-36xxx   5 dBm   12 GHz   5 dBm   2 GHz   ATF-35xxx   10 dBm  (10 GHz)   10 dBm   ATF-38xxx   12 dBm  (10 GHz)   12 dBm   ATF-34xxx   20 dBm  (10 GHz)   20 dBm   ATF-33xxx   23 dBm   (8 GHz)   21 dBm   2-4 V MESFETs   ATF-13xxx   17.5 dBm   12 GHz   17.5 dBm   2 GHz   ATF-26xxx   18 dBm   18 dBm   ATF-10xxx   18 dBm   20 dBm   ATF-21xxx   21 dBm   (8 GHz)   23 dBm   9 V Power FETs   ATF-46xxx   26 dBm   8 GHz   27 dBm   2 GHz   ATF-45xxx   28 dBm   29 dBm   ATF-44xxx   30 dBm   32 dBm 0  5 10 15 20 25 30 35 40     Output Power [dBm]                                                                                         What: An indication of the amount of output power a device can produce. P 1 dB can be interpreted as the maximum linear power available from the device; it is defined as the output power at which the gain has decreased (compressed) 1 dB from the small signal value. P sat or saturated output power is the maximum power under any conditions; a rule of thumb is P sat is 3 dB greater than P 1dB. Output power is a strong function of bias, being proportional to both the square of the operating voltage and the square of the bias current. Direction: needs to fit application P 1db must be large enough to allow a transistor to produce a signal of the required magnitude and distortion. Too low a level will lead to under-driving the following stage or unacceptable distortion. Too large a level may mean inefficient operation. Range: 0 - 32 dBm

this page last updated: 20 October 1999